Search results for "High electron"
showing 8 items of 8 documents
Layered Thiadiazoloquinoxaline-Containing Long Pyrene-Fused N-Heteroacenes
2018
Three thiadiazoloquinoxaline-containing long pyrene-fused N-heteroacenes with 8, 13, and 18 rings were designed and synthesized. They show high electron affinities (EAs) of approximately 4.1 eV, which were derived from the onset of the reduction peaks in cyclic voltammetry. Crystal structure analysis revealed in-plane extension through close contacts between thiadiazole units as well as layered packing, enabling in-plane and interlayer electron transport. Organic field-effect transistor devices provided electron mobilities, which suggest a potential way to enhance the charge transport in long N-heteroacenes.
High Electron Mobility and Disorder Induced by Silver Ion Migration Lead to Good Thermoelectric Performance in the Argyrodite Ag8SiSe6
2017
Superionic chalcopyrites have recently attracted interest in their use as potential thermoelectric materials because of extraordinary low thermal conductivities. To overcome long-term stability issues in thermoelectric generators using superionic materials at evaluated temperatures, materials need to be found that show good thermoelectric performance at moderate temperatures. Here, we present the structural and thermoelectric properties of the argyrodite Ag8SiSe6, which exhibits promising thermoelectric performance close to room temperature.
Adsorbate-Induced Oxygen Vacancy Mobility in Ultrathin Oxide Films
2013
Oxides at the nanometric scale show a behavior markedly different from that of their bulk counterparts. Ultrathin oxides grown on metals do not reach the full insulator regime, and they cannot decouple the electronic clouds of incoming adsorbates from that of the metal substrate. Although oxygen vacancies control the chemical and physical properties of ultrathin oxide films, the role of intrinsic defects has been overlooked so far. By means of density functional theory methods, we show that the addition of atoms with high electron affinity, such as Au, to ultrathin MgO grown either on a Ag or Mo support, completely reverses the preferential positions of oxygen vacancies, decreases their res…
Electronmicroscopical Contrast by Palladium Chloride
1986
Thin sections of glutaraldehyde-fixed, epoxy resin-embedded bone marrow from rats were treated with 2% palladium chloride in 2% concentrated HCl. This procedure was found to induce high electron density in chromatin from all cell types and in cytoplasmic granules of neutrophils and eosinophils. In the latter, the crystalline body showed more contrast than the matrix.
Structural, electronic, and electrical properties of an Undoped n-Type CdO thin film with high electron concentration
2014
Transparent conducting metal oxides (TCOs) combine the properties of optical transparency in the visible region with a high electrical conductivity. They are a critical component as the window electrode in liquid crystal and electroluminescent display devices, as well as in many designs of solar cells now under development. Sn-doped In2O3 is currently the most important TCO, but it suffers from some drawbacks. These include the high cost of indium, weak optical absorption in the blue-green region, as well as chemical instability that leads to corrosion phenomena in organic light-emitting devices. Indium tin oxide (ITO) films are also brittle and of relatively low durability. A number of oth…
Rotational and vibrational spectra of quantum rings
2000
One can confine the two-dimensional electron gas in semiconductor heterostructures electrostatically or by etching techniques such that a small electron island is formed. These man-made ``artificial atoms'' provide the experimental realization of a text-book example of many-particle physics: a finite number of quantum particles in a trap. Much effort was spent on making such "quantum dots" smaller and going from the mesoscopic to the quantum regime. Far-reaching analogies to the physics of atoms, nuclei or metal clusters were obvious from the very beginning: The concepts of shell structure and Hund's rules were found to apply -- just as in real atoms! In this Letter, we report the discovery…
Decoherence from dipolar interspin interactions in molecular spin qubits
2019
The realization of spin-based logical gates crucially depends on magnetically coupled spin qubits. Thus, understanding decoherence when spin qubits are in close proximity will become a roadblock to overcome. Herein, we propose a method free of fitting parameters to evaluate the qubit phase memory time ${T}_{m}$ in samples with high electron spin concentrations. The method is based on a model aimed to estimate magnetic nuclear decoherence [P. C. E. Stamp and I. S. Tupitsyn, Phys. Rev. B 69, 014401 (2004)]. It is applied to a ground-spin $J=8$ magnetic molecule 1 displaying atomic clock transitions, namely ${{[\mathrm{H}{\mathrm{o}}^{\mathrm{III}}{({\mathrm{W}}_{5}{\mathrm{O}}_{18})}_{2}]}^{9…
Failure analysis of normally-off GaN HEMTs under avalanche conditions
2020
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) are promising devices in the power electronics field owing to their wide bandgap (WBG). However, all the potential advantages provided by their WBG require reliability improvement. In industrial applications, robustness is one of the main factors considered by circuit designers. This study focuses on the observation of the degradation behavior of the main waveforms of unclamped inductive-switching (UIS) test circuits of two different commercial GaN HEMT structures. The relevance of this study lies in the potential applications of these devices to high-voltage applications and automotive systems where they are subjected to many…